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cc 1121 swrs111c C revised march 2013 page 1 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. high performance low power rf transceiver applications u ltra low power wireless systems with channel spacing down to 5 0 khz 170 / 315 / 433 / 868 / 915 / 92 0 / 950 mhz ism/srd band systems wireless metering and wireless smart grid (amr and ami ) ieee 802 .15.4g systems home and building automation wireless alarm and security systems industrial monitoring and control wireless heal t hcare applications wireless sensor networks and active rfid regulations suitable for systems targeting compliance with: europe etsi en 300 220 etsi en 54 - 25 us fcc cfr47 part 15 fcc cfr47 part 24 japan a rib std - t 108 key features high performance single chip transceiver o excellent receiver sensitivity: - 120 dbm at 1.2 kbps - 110 dbm at 50 kbps o blocking per formance: 8 6 db at 10 mhz o adjacent channel selectivity: 6 0 db o very low phase noise: - 11 1 dbc/hz at 10 khz offset power supply o wide supply voltage range (2.0 v C 3.6 v) o low current consumption: - rx: 2 ma in rx sniff mode - rx: 1 7 ma peak current in low power mode - rx: 22 ma peak current in high performance mode - tx: 45 ma at +14 dbm o power down: 0.3 a programmable output power up to +1 6 dbm with 0.4 db step size automatic output power ramping configurable data rates: 1.2 to 200 kbps supported modulatio n formats: 2 - fsk, 2 - gfsk, 4 - fsk, 4 - gfsk, msk, oo k wavematch: advanced digital signal processing for improved sync detect performance rohs compliant 5x5mm qfn 32 package peripherals and support functions enhanced wake - on - radio functionality for automatic low - power receive polling separate 128 - byte rx and tx fifos includes functions for a ntenna diversity support support for re - transmissions support for auto - acknowledge of received packets tcxo support and control, also in power modes automatic clear channe l assessment (cca) for listen - before - talk (lbt) systems built in coding gain support for increased range and robustness digital rssi measurement support for seamless integration with the cc1190 for increased range giving up to 3 d b improvement in sensitivi ty and up to +27 dbm output power temperature sensor description the cc112 1 is a fully integrated single - chip radio transceiver designed for high performance at very low power and low voltage operation in cost effective wireless systems. all filters are integrated, removing the need for costly external saw and if filters. the device is mainly intended for the srd (short range device) frequency bands at 274 - 320 mhz, 410 - 480 mhz and 820 - 960 mhz. the cc112 1 provides extensive hardware support for packet han dling, data buffering, burst transmissions, clear channel assessment, link quality indication and wake - on - radio. the cc112 1 main operating parameters can be controlled via an spi interface. in a typical system, the cc112 1 will be used together with a micro controller and only few external passive components. c s n s o ( g p i o 1 ) d v d d a v d d _ i f r b i a s a v d d _ r f g p i o 0 r e s e t _ n g p i o 3 g p i o 2 d v d d v d d _ g u a r d c c 1 1 2 1 5 4 3 2 1 l n a _ p l n a _ n d c p l _ v c o a v d d _ s y n t h 1 t r x _ s w 1 9 2 0 2 1 2 2 2 3 a v d d _ p f d _ c h p x o s c _ q 2 x o s c _ q 1 d c p l _ p f d _ c h p 2 7 2 8 2 9 3 0 3 1 d c p l 6 7 p a 1 8 1 7 2 6 2 5 1 5 9 1 0 1 1 1 2 1 3 1 4 s i n . c . d c p l _ x o s c a v d d _ x o s c 8 s c l k 1 6 2 4 e x t _ x o s c 3 2 l p f 0 l p f 1 a v d d _ s y n t h 2 g n d g r o u n d p a d
cc 1121 swrs111c C revised march 2013 page 2 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. table of contents 1 electrical specifica tions ................................ ................................ ................................ .... 3 1.1 a bsolute m ax r atings ................................ ................................ ................................ ................ 3 1.2 g eneral c haracteristics ................................ ................................ ................................ ............ 3 1.3 rf c haracteristics ................................ ................................ ................................ ...................... 3 1.4 r egula tory s tandards ................................ ................................ ................................ ............... 4 1.5 c urrent c onsumption , s tatic m odes ................................ ................................ ........................ 5 1.6 c urrent c onsumption , t ransmit m odes ................................ ................................ ................... 5 1.7 c urrent c onsumption , r eceive m odes ................................ ................................ ...................... 6 1.8 r eceive p arameters ................................ ................................ ................................ ..................... 6 1.9 t ransmit p arameters ................................ ................................ ................................ ................. 11 1.10 pll p arameters ................................ ................................ ................................ .......................... 12 1.11 w ake - up and t iming ................................ ................................ ................................ ................... 13 1.12 32 mh z c r ystal o scillator ................................ ................................ ................................ ...... 13 1.13 32 mh z c lock i nput (tcxo) ................................ ................................ ................................ ...... 13 1.14 32 k h z c lock i nput ................................ ................................ ................................ ..................... 14 1.15 32 k h z rc o scillator ................................ ................................ ................................ ................ 14 1.16 i/o and r eset ................................ ................................ ................................ ................................ 14 1.17 t emperature s ensor ................................ ................................ ................................ ................... 14 2 typical performance curves ................................ ................................ ............................ 15 3 pin configuration ................................ ................................ ................................ ..................... 17 4 block diagram ................................ ................................ ................................ ............................ 18 4.1 f requency s ynthesizer ................................ ................................ ................................ ............. 1 8 4.2 r eceiver ................................ ................................ ................................ ................................ ....... 18 4.3 t ransmitter ................................ ................................ ................................ ................................ . 19 4.4 r adio c ontrol and u ser i nterface ................................ ................................ ......................... 19 4.5 e nhanced w ake - o n - r adio ( e wor) ................................ ................................ ......................... 19 4.6 s niff m ode ................................ ................................ ................................ ................................ .... 19 4.7 a ntenna d iversity ................................ ................................ ................................ ..................... 20 4.8 l ow p ower / h igh p erformance m ode ................................ ................................ ..................... 20 5 typical application circuit ................................ ................................ ............................... 21 6 history ................................ ................................ ................................ ................................ ............. 22
cc 1121 swrs111c C revised march 2013 page 3 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1 electrical specifications all measurements performed on cc1120 em _868_915 rev.1.0.1, cc1120 em _955 rev.1 .2.1 , cc1120em_420_4 70 rev.1.0.1 or cc1120em_169 rev.1.2 1.1 absolute max ratings parameter min typ max unit condition supply voltage ("vdd") - 0.3 3.9 v storage temperature range - 40 125 c esd 2000 v hbm esd 500 v cdm input rf level +10 dbm v oltage on a ny d igital p in - 0.3 vdd+0.3 max 3.9 v voltage o n analog pins (including dcpl pins) - 0.3 2.0 v 1.2 general characteristics parameter min typ max unit condition voltage supply r ange 2.0 3.6 v temperature r ange - 40 85 c 1.3 rf characteristi cs parameter min typ max unit condition frequency b ands 820 960 mhz 410 480 mhz 274 320 mhz please see application note an115 using the cc112x/cc1175 at 274 to 320 mhz for more information 164 192 mhz frequency resolution 30 hz in 820 - 96 0 mhz band 15 hz in 410 - 480 mhz band 6 hz in 164 - 192 mhz band datarate 0 2 00 kbps packet mode 0 100 kbps transparent mode datarate step size 1e - 4 bps
cc 1121 swrs111c C revised march 2013 page 4 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.4 regulatory standards performance mode frequency band suitable for compliance with comme nts high performance mode 820 C 960 mhz arib t - 108 arib t - 96 etsi en 300 220 receiver category 2 etsi en 54 - 25 fcc part 24 submask d fcc part 15.247 fcc part 15.249 performance also suitable for systems targeting maximum allowed output power in the respec tive bands, using a range extender such as the cc1190 410 C 480 mhz etsi en 300 220 receiver category 2 performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender 164 C 192 mhz etsi en 3 00 220 receiver category 2 performance also suitable for systems targeting maximum allowed output power in the respective bands, using a range extender low power mode 820 C 960 mhz etsi en 300 220 receiver category 2 fcc part 15.247 fcc part 15.249 410 C 480 mhz etsi en 300 220 receiver category 2 164 C 192 mhz etsi en 300 220 receiver category 2
cc 1121 swrs111c C revised march 2013 page 5 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.5 current c onsumption , static modes t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition power down with r etent ion 0.3 1 a 0.5 a low - power rc oscillator running xoff mode 170 a crystal oscillator / tcxo disabled idle mode 1.3 ma clock running, system waiting with no radio activity 1.6 current consumption , transmit modes 950 mhz band (high performance mo de) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumption +10 dbm 37 ma tx c urrent consumption 0 dbm 26 ma 868/915 /920 mhz bands (high performance mode) t a = 25c, vdd = 3.0 v if nothing else st ated parameter min typ max unit condition tx current c onsumption +14 dbm 45 ma tx current c onsumption +10 dbm 34 ma 434 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx curren t consumption +15 dbm 50 ma tx current co nsumption +14 dbm 45 ma tx current c onsumption +10 dbm 34 ma 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition tx current consumpti on +15 d bm 54 ma tx current c onsumption +14 dbm 49 ma tx current c onsumption +10 dbm 41 ma low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition tx current c onsumption +10 dbm 32 m a
cc 1121 swrs111c C revised march 2013 page 6 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.7 current c onsumption , receive modes high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx wait for s ync 1.2 kbps, 4 byte preamble 2 ma using rx sniff mode, where the receiver wa kes up at regular intervals to look for an incoming packet rx peak current 433, 868/915 and 950 mhz bands 170 mhz band 22 23 ma ma peak current consumption during packet reception at the sensitivity threshold average current consumption check for da ta packet every 1 s econd using wake on r adio 15 ua 50 kbps, 5 byte preamble, 32 khz rc oscillator used as sleep timer low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition rx peak current lo w power rx mode 1.2 kbps 17 ma peak current consumption during packet re ception at the sensitivity threshold 1.8 receive parameters 1 general receive parameters ( high performance mode ) t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated paramete r min typ max unit condition saturation +10 dbm digital channel filter programmable b andwidth 4 1.7 200 khz iip3, normal mode - 1 4 dbm at maximum gain iip3, high linearity mode - 8 dbm using 6 db gain reduction in front end datarate offset t oler ance 12 0. 2 % % with carrier sense detection enabled and assuming 4 byte preamble with carrier sense detection dis abled spurious emissions 1 - 13 ghz (vco leakage at 3.5 ghz) 30 mhz to 1 ghz - 56 < - 57 dbm dbm radiated emissions m easured acco rding to etsi en 300 220 , f c = 869.5 mhz optimum source impedance 868 / 915 / 920 mhz bands 433 mhz band 169 mhz band 60 + j60 / 30+j30 100 + j60 / 50+ j30 140 + j40 / 70 + j20 ? ? ? 1 all rx measurements made at the antenna connector, to a bit error rate limit of 1%
cc 1121 swrs111c C revised march 2013 page 7 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. rx performance in 950 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition sensitivity note: s ensitivity can be improved if the tx and rx matching networks are separated. - 114 dbm 1.2 kbps, dev=20 khz chf=50 khz 2 - 107 dbm 50 kbps 2 gfsk, dev= 25 khz , chf= 100 khz - 100 dbm 200 kbps , dev=83 khz (outer symbols), chf=200 khz, 4gfsk 3 blocking and selectivity 1.2 kbps 2fsk, 50 khz chann el separation, 20 khz deviation, 50 khz channel filter 47 db 50 k hz (adjacent channel) 48 db + 100 k hz (alternate channel) 69 db 1 mhz 71 db 2 mhz 78 db 10 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 2 5 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode ) 43 db 200 k hz (adjacent channel) 51 db 400 k hz (alternate channel) 62 db 1 mhz 65 db 2 mhz 71 db 10 mhz blocking and selectivity 200 k bps 4gf sk, 83 khz deviation (outer symbols) , 200 khz channel filter, zero if 37 db 200 k hz (adjacent channel) 44 db 400 k hz (alternate channel) 55 db 1 mhz 58 db 2 mhz 64 db 10 mhz 2 dev is short for deviation, chf is short for channel filter bandwidth 3 bt=0.5 is used in all gfsk measurements
cc 1121 swrs111c C revised march 2013 page 8 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. rx performance in 868/915 /920 mhz bands (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition sensitivity - 120 dbm 1.2 kbps, dev=10 khz chf=41.7 khz, using increased rx filtering - 117 dbm 1.2 kbps, dev=20 khz chf=50 khz - 11 4 dbm 4.8 kbps ook - 110 dbm 38.4 kbps, dev=2 0 khz chf=100 khz - 110 dbm 50 kbps 2 gfsk, dev= 25 khz , chf= 100 khz - 103 dbm 200 kbps , dev=83 khz (outer symbols), chf=200 khz, 4gfsk blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 48 db 50 k hz (adjacent channel) 48 db + 100 k hz (alternate channel) 69 db 1 mhz 74 db 2 mhz 81 db 10 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviat ion, 100 khz channel filter 42 db + 100 k hz (adjacent channel) 43 db 200 k hz (alternate channel) 62 db 1 mhz 66 db 2 mhz 74 db 10 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode ) 43 db 200 k hz (adjacent channel) 50 db 400 k hz (alternate channel) 61 db 1 mhz 65 db 2 mhz 74 db 10 mhz blocking and selectivity 200 kbps 4gfsk, 83 khz deviati on (outer symbols) , 200 khz channel filter, zero if 36 db 200 khz (adjacent channel) 44 db 400 khz (alternate channel) 55 db 1 mhz 59 db 2 mhz 67 db 10 mhz
cc 1121 swrs111c C revised march 2013 page 9 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. rx performance in 434 mhz band (high performance mode) t a = 25 c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition sensitivity - 109 dbm 50 kbps 2 gfsk, dev= 25 khz , chf= 100 khz - 116 dbm 1.2 kbps, dev=20 khz chf=50 khz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 k hz deviation, 50 khz channel filter 54 db 50 k hz (adjacent channel) 54 db + 100 k hz (alternate channel) 74 db 1 mhz 78 db 2 mhz 86 db 10 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 47 db + 100 k hz (adjacent channel) 50 db 200 k hz (alternate channel) 67 db 1 mhz 71 db 2 mhz 78 db 10 mhz rx performance in 170 mhz band (high performance mode) t a = 25c, vdd = 3.0 v if nothing else stat ed parameter min typ max unit condition sensitivity - 117 dbm 1.2 kbps, dev=20 khz chf=50 khz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 60 db 50 k hz (adjacent channel) 60 db + 100 k hz (alternate channel) 76 db 1 mhz 77 db 2 mhz 83 db 10 mhz
cc 1121 swrs111c C revised march 2013 page 10 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. rx performance in low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition sensitivity - 99 dbm 38.4 kbps, dev=50 k hz chf= 1 00 khz - 99 dbm 50 kbps 2 gfsk, dev= 25 khz , chf= 100 khz blocking and selectivity 1.2 kbps 2fsk, 50 khz channel separation, 20 khz deviation, 50 khz channel filter 43 db 50 k hz (adjacent channel) 45 db + 100 k hz (alternate channel) 71 db 1 mhz 74 db 2 mhz 75 db 10 mhz blocking and selectivity 38.4 kbps 2gfsk, 100 khz channel separation, 20 khz deviation, 100 khz channel filter 37 db + 100 k hz (adjacent channel) 43 db + 200 k hz (alternate channel) 58 db 1 mhz 62 db 2 mhz 64 db + 10 mhz blocking and selectivity 50 kbps 2gfsk, 200 khz channel separation, 25 khz deviation, 100 khz channel filter (same modulation format as 802.15.4g mandatory mode ) 43 db + 200 k hz (adjacent channel) 52 db + 400 k h z (alternate channel) 60 db 1 mhz 64 db 2 mhz 65 db 10 mhz saturation +10 dbm
cc 1121 swrs111c C revised march 2013 page 11 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.9 transmit p arameters t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition max output p ower +12 dbm at 95 0 mhz +14 +15 dbm dbm at 915 /920 mhz at 915 /920 mhz with vdd = 3.6 v +15 +16 dbm dbm at 868 mhz at 868 mhz with vdd = 3.6 v +15 +16 dbm dbm at 433 mhz at 433 mhz with vdd = 3.6 v +15 +16 dbm dbm at 170 mhz at 170 mhz with vdd = 3.6 v min o utput p ower - 11 - 40 dbm dbm within fine step size range within coarse step size range output power step size 0.4 db within fine step size range adjacent channel power - 75 dbc 4 - gfsk 9.6 kbps in 12.5 khz channel, measured in 100 hz bandwidth at 434 mhz (fcc part 90 mask d compliant) - 58 dbc 4 - gfsk 9.6 kbps in 12.5 khz channel, measured in 8.75 khz bandwidth (etsi 300 220 compliant) - 61 dbc 2 - gfsk 2.4 kbps in 12.5 khz channel, 1.2 khz deviation spurious emissions (not including harmonics) < - 6 0 db m harmonics 2 nd harm, 170 mhz 3 rd harm, 170 mhz 2 nd harm, 433 mhz 3 rd harm, 433 mhz 2 nd harm, 450 mhz 3 rd harm, 450 mhz 2 nd harm, 868 mhz 3 rd harm, 868 mhz 2 nd harm, 915 mhz 3 rd harm, 915 mhz 4 th harm, 915 mhz 2 nd harm, 950 mhz 3 rd harm, 950 mhz - 39 - 58 - 56 - 51 - 60 - 45 - 40 - 42 56 52 60 - 58 - 42 dbm dbm dbm dbm dbm dbm dbm dbm dbuv/m dbuv/m dbuv/m dbm dbm transmission at +14 dbm (or maximum allowed in applicable band where this is less than +14 dbm) using ti reference design e missions measured according to arib t - 96 in 950 mhz band, etsi en 300 - 220 in 170, 433 and 868 mhz bands and fcc part 15.247 in 450 and 915 mhz band fourth harmonic in 915 mhz band will require extra filtering to meet fcc requirements if transmitting for long intervals (>50 ms periods) optim um load impedance 868 / 915 / 920 mhz bands 433 mhz band 169 mhz band 35 + j35 55 + j25 80 + j0 ? ? ?
cc 1121 swrs111c C revised march 2013 page 12 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.10 pll p arameters high performance mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition phase noise in 950 mhz band - 99 dbc/hz 10 khz offset - 99 dbc/hz 100 khz offset - 123 dbc/hz 1 mhz offset phase noise in 868/915 /920 mhz bands - 99 dbc/hz 10 khz offset - 100 dbc/hz 100 khz offset - 122 dbc/hz 1 mhz offset phase noise in 433 mhz band - 106 dbc/hz 10 khz offset - 107 dbc/hz 100 khz offset - 127 dbc/hz 1 mhz offset phase noise in 170 mhz band - 111 dbc/hz 10 khz offset - 116 dbc/hz 100 khz offset - 135 dbc/hz 1 mhz offset low power mode t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition phas e noise in 950 mhz band - 90 dbc/hz 10 khz offset - 92 dbc/hz 100 khz offset - 124 dbc/hz 1 mhz offset phase noise in 868/915 mhz bands - 95 dbc/hz 10 khz offset - 95 dbc/hz 100 khz offset - 124 dbc/hz 1 mhz offset phase noise i n 433 mhz band - 98 dbc/hz 10 khz offset - 102 dbc/hz 100 khz offset - 129 dbc/hz 1 mhz offset phase noise in 170 mhz band - 106 dbc/hz 10 khz offset - 110 dbc/hz 100 khz offset - 136 dbc/hz 1 mhz offset
cc 1121 swrs111c C revised march 2013 page 13 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.11 wake - up and timing t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated parameter min typ max unit condition powerdown to idle 0.4 m s depends on crystal idle to rx/tx 166 s calibration disabled 461 s calibration enabled rx/tx t urnaround 50 s rx/ tx t o idle time 296 s calibrate when leaving rx/ tx enabled 0 s calibrate when leaving rx/ tx disabled frequency s ynthesizer c alibration 0.4 m s when using scal strobe minimum required number of preamble bytes 0.5 bytes required for rf front end gai n settling only. digital demodulation does not require preamble for settling time from start rx until v alid rssi i ncluding gain settling (f unction of channel bandwidth . programmable for trade - off between speed and accuracy ) 0.3 ms 200 khz channels 1.12 32 mhz crystal oscillator t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition crystal f requency 32 33.6 mhz note: it is recommended that the crystal frequency is chosen so that the rf channel(s) are >1 mhz away from multiples of xosc in tx and xosc/2 in rx load capacitance (c l ) 10 pf esr 60 ? 1.13 32 mhz clock input (tcxo) t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit c ondition clock f requency 32 33.6 mhz clock input amplitude (peak - to - peak) 0.8 vdd v simulated over operating conditions
cc 1121 swrs111c C revised march 2013 page 14 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 1.14 32 khz c lock i nput t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition clock f requency 32 khz 32 khz clock input pin input high voltage 0.8vdd v 32 khz clock input pin input low voltage 0.2vdd v 1.15 32 khz rc oscillator t a = 25c, vdd = 3.0 v if nothing else stated. parameter min typ max unit condition frequency 32 khz after calibration frequency accuracy after calibration 0.1 % relative to frequency reference (i.e. 32 mhz crystal or tcxo) initial calibration time 1.6 ms 1.16 i/o and r eset t a = 25c, vdd = 3.0 v if nothing else stated parameter min typ max unit condition logic inpu t high voltage logic input low voltage 0.8vdd 0.2v dd v v logic output high voltage logic output low voltage 0.8vdd 0.2v dd v v at 4 ma output load or less power - on reset threshold 1.3 v voltage on dvdd pin 1.17 temperature sensor t a = 25c, v dd = 3.0 v if nothing else stated parameter min typ max unit condition temperature sensor range - 4 0 85 c temperature coefficient 2.66 mv / c change in sensor output voltage vs change in temperature typical output voltage 794 mv typical sensor output voltage at t a = 25c, vdd = 3.0 v vdd coefficient 1.17 mv / v change in sensor output voltage vs change in vdd the cc1121 can be configured to provide a voltage proportional to temperature on gpio1. using the information above, the temperature can be estimated by measuring this voltage. please refer to the cc1 121 user guide for more information.
cc 1121 swrs111c C revised march 2013 page 15 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 2 typical performance curves t a = 25c, vdd = 3.0 v, f c = 869.5 mhz if nothing else stated all measurements performed on cc1120 em _868_915 rev.1.0.1, c c1120 em _955 rev.1.2.1 , cc1120em_420_470 rev.1.0.1 or cc1120em_169 rev.1.2 note that the "output power vs load impedance" plot was measured at the 50 ? antenna connector output power at 868mhz vs pa power setting -50 -40 -30 -20 -10 0 10 20 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting output power (dbm) tx current at 868mhz vs pa power setting 0 10 20 30 40 50 60 7f 7b 77 73 6f 6b 67 63 5f 5b 57 53 4f 4b 47 43 pa power setting tx current (ma) output power vs voltage max setting, 170 mhz 6 8 10 12 14 16 18 2 2.5 3 3.5 supply voltage (v) output power (dbm) output power vs temperature max setting, 170 mhz, 3.6v 15 15.5 16 16.5 17 -40 0 40 80 temperature (oc) output power (dbm)
cc 1121 swrs111c C revised march 2013 page 16 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. gpio output high voltage vs current being sourced 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3.1 0 5 10 15 20 25 30 35 current (ma) gpio output high voltage (v) gpio output low voltage vs current being sinked 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 35 current (ma) gpio output low voltage (mv)
cc 1121 swrs111c C revised march 2013 page 17 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 3 pin configuration the cc1121 pin - out is shown in the table below. pin # pin name type / direction description 1 vdd_guard power 2.0 - 3.6 v vdd 2 reset_n digital input asynchronous, active - low digital r eset 3 gpio3 digital input/output general purpose io 4 gpio2 digital input/output general purpose io 5 dvdd power 2.0 - 3.6 v vdd to internal digital regulator 6 d cpl power digital regulator output to external c 7 s i digital input serial data in 8 s c lk digital input serial data clock 9 so(gpio1) digital input/output serial data out (general purpose io) 10 gpio0 digital input/output general purpose io 11 cs n digital input active - low chip - select 12 d vdd power 2.0 - 3.6 v vdd 13 avdd_if power 2.0 - 3.6 v vdd 14 rbias analog external high precision r 15 avdd_rf power 2.0 - 3.6 v vdd 16 nc not connected 17 pa analog single - ended tx output 18 trx_sw analog tx/rx switch 19 lna_p analog differential rx input 20 lna_n analog differential rx input 21 dcpl_vco power pin for external decoupling of vco supply regulator 22 avdd_synth1 power 2.0 - 3.6 v vdd 23 l pf0 analog external loopfilter components 24 l pf1 external loopfilter components 25 avdd_pfd_chp power 2.0 - 3.6 v vdd 26 dcpl_pfd_chp pow er pin for external decoupling of pfd and chp regulator 27 a vdd_synth2 power 2.0 - 3.6 v vdd 28 avdd_xosc power 2.0 - 3.6 v vdd 29 dcpl_xosc power pin for external decoupling of xosc supply regulator 30 xosc_q1 analog crystal oscillator pin 1 (must be grounded if a tcxo or other external clock connected to ext_xosc is used) 31 xosc_q2 analog crystal oscillator pin 2 (must be left floating if a tcxo or other external clock connected to ext_xosc is used) 32 ext_xosc digital input pin for external xosc i nput (must be grounded if a regular xosc connected to xosc_q1 and xosc_q2 is used) - gnd ground pad the ground pad must be connected to a solid ground plane
cc 1121 swrs111c C revised march 2013 page 18 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 4 block d iagram a system block diagram of cc112 1 is shown figure 4 . 1 . figure 4 . 1 : system block d iagram 4.1 frequency synthesizer at the heart of cc1121 there is a fully integrated, fractional - n, ultra high performance frequency synthesizer. the frequency synthesizer is designed for excellent phase noise performance, providing very high selectivity and blocking performance. the system is designed to comply with the most stringent regulatory spectral masks at maximum transmit power. either a crystal can be connected to xosc_q1 and xosc_q2 , or a tcxo can be connected to the ext_xosc input . the oscillator generates the reference frequency for the synthesizer, as well as clocks for the adc and the digital part. to reduce system cost, cc1121 has high accuracy frequency estimation and c ompensation registers to measure and compensate for crystal inaccuracies, enabling the use of lower cost crystals. if a tcxo is used, the cc1121 will automatically turn the tcxo on and off when needed to support low power modes and wake - on - radio operation. 4.2 receiver cc1121 features a highly flexible receiver. the received rf signal is amplified by the low - noise amplifier (lna) and down - converted in quadrature (i and q) to the intermediate frequency (if). at if, the i/q signals are digiti z ed by the high dynam ic range adcs. an advanced automatic g ain c ontrol (agc) unit adjusts the front end gain, and enables the cc1121 to receive both strong and weak signals, even in the presence of strong interferers. high attenuation channel and data filtering enable recepti on with strong neighbor channel interferers. the i/q signal is converted to a phase / magnitude signal to support both fsk and ook modulation schemes. c c 1 1 2 x m a r c m a i n r a d i o c o n t r o l u n i t u l t r a l o w p o w e r 1 6 b i t m c u 2 5 6 b y t e f i f o r a m b u f f e r 4 k b y t e r o m r f a n d d s p f r o n t e n d p a c k e t h a n d l e r a n d f i f o c o n t r o l c o n f i g u r a t i o n a n d s t a t u s r e g i s t e r s e w o r e n h a n c e d u l t r a l o w p o w e r w a k e o n r a d i o t i m e r s p i s e r i a l c o n f i g u r a t i o n a n d d a t a i n t e r f a c e i n t e r r u p t a n d i o h a n d l e r s y s t e m b u s p a l n a _ p l n a _ n 9 0 d b d y n a m i c r a n g e a d c 9 0 d b d y n a m i c r a n g e a d c h i g h l i n e a r i t y l n a 1 4 d b m h i g h e f f i c i e n c y p a c h a n n e l f i l t e r x o s c c o r d i c a g c a u t o m a t i c g a i n c o n t r o l , 6 0 d b v g a r a n g e r s s i m e a s u r e m e n t s a n d c a r r i e r s e n s e d e t e c t i o n h i g h l y f l e x i b l e f s k / o o k d e m o d u l a t o r ( o p t i o n a l b i t c l o c k ) ( o p t i o n a l l o w j i t t e r s e r i a l d a t a o u t p u t f o r l e g a c y p r o t o c o l s ) d a t a i n t e r f a c e w i t h s i g n a l c h a i n a c c e s s x o s c _ q 1 x o s c _ q 2 u l t r a l o w p o w e r 3 2 k h z a u t o - c a l i b r a t e d r c o s c i l l a t o r ( o p t i o n a l 3 2 k h z c l o c k i n t p u t ) c s n ( c h i p s e l e c t ) s i ( s e r i a l i n p u t ) s o ( s e r i a l o u t p u t ) s c l k ( s e r i a l c l o c k ) ( o p t i o n a l g p i o 0 - 3 ) m o d u l a t o r f u l l y i n t e g r a t e d f r a c t i o n a l - n f r e q u e n c y s y n t h e s i z e r o u t p u t p o w e r r a m p i n g a n d o o k / a s k m o d u l a t i o n i f a m p i f a m p ( o p t i o n a l a u t o d e t e c t e d e x t e r n a l x o s c / t c x o ) ( o p t i o n a l g p i o f o r a n t e n n a d i v e r s i t y ) i q b a t t e r y s e n s o r / t e m p s e n s o r p o w e r o n r e s e t
cc 1121 swrs111c C revised march 2013 page 19 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. a sophisticated pattern recognition algorithm locks onto the synchronization word without need for pream ble settling bytes. receiver settling time is therefore reduced to the settling time of the agc, typically 4 bits. the advanced pattern recognition also greatly reduces the problem of false sync triggering on noise, fur ther reducing power consumption and i mproving sensitivity and reliability. the pattern recognition logic can also be used as a high performance preamble detector to reliably detect a valid preamble in the channel. a novel i/q compensation algorithm removes any problem of i/q mismatch and henc e avoids time consuming and costly i/q / image calibration steps in production or in the field. 4.3 transmitter the cc1121 transmitter is based on direct synthesis of the r f frequency (in - loop modulation). to achieve effective spectrum usage, cc1121 has exte nsive data filtering and shaping in tx to support high throughput data communication in narrowband channels. the modulator also controls power ramping to remove issues such as spectral splattering when driving external high power rf amplifiers. 4.4 radio cont rol and user interface the cc1121 digital control system is built around marc (main radio control) implemented using an internal high performance 16 bit ultra low power processor. marc handles power modes, radio sequencing and protocol timing. a 4 - wire spi serial interface is used for configuration and data buffer access. the digital baseband includes support for channel configuration, packet handling, and data buffering. the host mcu can stay in power down until a valid rf packet has been received, and the n burst read the data, greatly reducing the power consumption and computing power required from the host mcu. the cc1121 radio control and user interface is based on the widely used cc1101 transceiver to enable easy sw transition between the two platforms . the command strobes and the main radio states are the same for the two platforms. for legacy formats cc1121 also has support for two serial modes. in synchronous serial mode cc1121 performs bit synchronization and provides the mcu with a bit clock with a ssociated data. in transparent mode cc1121 outputs the digital baseband signal using a digital interpolation filter to eliminate jitter introduced by digital filtering and demodulation. 4.5 enhanced wake - on - radio (ewor) ewor, using a flexible integrated sleep timer, enables automatic receiver polling with no intervention from the mcu. the cc1121 will enter rx, listen and return to sleep if a valid rf packet is not received. the sleep interval and duty cycle can be configured to make a trade - off between network latency and power consumption. incoming messages are time - stamped to simplify timer re - synchronization. the ewor timer runs off an ultra low power 32 khz rc oscillator. to improve timing accuracy, the rc oscillator can be automatically calibrated to the rf crystal in configurable intervals. 4.6 sniff mode the cc1121 supports very quick start up times, and requires very few preamble bits. sniff mode uses this to dramatically reduce the current consumption while the receiver is waiting for data. since the cc11 21 is able to wake up and settle much faster than the length of most preambles, it is not required to be in rx continuously while waiting for a packet to arrive. instead, the enhanced wake - on - radio feature can be used to put the device into sleep periodica lly. by setting an appropriate sleep time, the cc1121 will be able to wake up and receive the packet when it arrives with no performance loss. this removes the need for accurate timing synchronization between
cc 1121 swrs111c C revised march 2013 page 20 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. transmitter and receiver, and allows the user t o trade off current consumption between the transmitter and receiver. 4.7 antenna diversity antenna diversity can increase performance in a multi - path environment. an external antenna switch is required. the switch can be automatically controlled by cc1121 usi ng one of the gpio pins (also support for differential output control signal typically used in rf switches). if antenna diversity is enabled, the gpio will alternate between states until a valid rf input signal is detected. an optional acknowledge packet can be transmitted without changing gpio state. an incoming rf signal can be validated by received signal strength, by using the automatic preamble detector, or a combination of the two. using the preamble detector will make a more robust system and avoid the need to set a defined signal strength threshold, as this threshold will set the sensitivity limit of the system. 4.8 low power / high performance mode the cc1121 is highly configurable, enabling trade - off s between power and performance to be made based on the needs of the application . this data sheet describes two modes - low power mode and high performance mode - which represent configurations where the device is optimized for either power or performance.
cc 1121 swrs111c C revised march 2013 page 21 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 5 typ ical application circuit very few external comp onents are required for the operation of cc112 1 . a typical application circuit is shown below . note that it does not show how the board layout should be done, which will greatly infl uence the rf performance of cc1121 . this section is meant as an introducti on only. n ote that decoupling capacitors for power pins are not shown in the figure below . figure 5 . 1 : typical a pplication c ircuit ( o p t i o n a l c o n t r o l p i n f r o m c c 1 1 2 1 ) a v d d _ p f d _ c h p x o s c _ q 2 x o s c _ q 1 d c p l _ p f d _ c h p a v d d _ s y n t h 2 d c p l _ x o s c a v d d _ x o s c e x t _ x o s c r e s e t _ n g p i o 3 g p i o 2 d v d d v d d _ g u a r d d c p l s i s c l k c s n s o ( g p i o 1 ) d v d d r b i a s a v d d _ i f a v d d _ r f n . c . g p i o 0 l n a _ p l n a _ n d c p l _ v c o a v d d _ s y n t h 1 p a t r x _ s w l p f 0 l p f 1 v d d v d d v d d v d d v d d c c 1 1 2 1 5 4 3 2 1 6 7 8 1 3 1 2 1 1 1 0 9 1 4 1 5 1 6 2 0 2 1 2 2 2 3 2 4 1 9 1 8 1 7 2 8 2 9 3 0 3 1 3 2 2 7 2 6 2 5 v d d v d d 3 2 m h z c r y s t a l o p t i o n a l x o s c / t c x o m c u c o n n e c t i o n s p i i n t e r f a c e a n d o p t i o n a l g p i o p i n s v d d v d d v d d
cc 1121 swrs111c C revised march 2013 page 22 of 22 production data information is current as of publication date. products conform to specifications per the terms of texas instruments sta ndard warranty. production processing does not necessarily include testing of all parameters. 6 history revision date description / changes swrs111 c march 2013 added ar ib t - 108 to list of regulations added optimum source / load impedance added missing unit "dbm" in output power section added information about the temperature sensor clarified how the typical performance curves have been measured corrected wrong deviation for 38.4 kbps sensitivity (was 50 khz, corrected to 20 khz) pin cs_n renamed to csn to comply with naming convention used in the user guide stated which etsi en 300 220 receiver category that is suitable for low power mode clarified under max ratings that i/o voltages should not exceed device supply voltage by more than 0.3 v various minor spelling errors corrected swrs111b april 2012 added improved 1.2kbps sensitivity fixed min rx bandwidth from 40khz to 41.7khz added ground pad on page 1 pin - out and pin description added tcxo clock input voltage requirement changed all pin names in pin description and figures to uppercase changed "pa out" to "pa" in block diagram corrected deviation on 38.4kbps case from 50khz to 20khz corrected error in em list: cc1120em_420_970 is corrected to cc1120em_420_470 added 274 - 320 mhz band and pointed to app note for more info (added mention of 315 mhz band on front page) updated sniff mode current to 2 ma added "wavematch:" in front of "advanced digital signal processing ..." on front page data rate offset tolerance: specified that 4 byte preamble only applies to 12% offset removed solder reflow temperature under absolute max ratings moved crystal esr to max column added history se ction swrs111a dec. 2011 initial release
package option addendum www.ti.com 16-oct-2013 addendum-page 1 packaging information orderable device status (1) package type package drawing pins package qty eco plan (2) lead/ball finish msl peak temp (3) op temp (c) device marking (4/5) samples CC1121RHBR active vqfn rhb 32 3000 green (rohs & no sb/br) cu nipdauag level-3-260c-168 hr -40 to 85 cc1121 cc1121rhbt active vqfn rhb 32 250 green (rohs & no sb/br) cu nipdauag level-3-260c-168 hr -40 to 85 cc1121 cc1121rhmr obsolete vqfn rhm 32 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1121 cc1121rhmt obsolete vqfn rhm 32 green (rohs & no sb/br) cu nipdau level-3-260c-168 hr -40 to 85 cc1121 (1) the marketing status values are defined as follows: active: product device recommended for new designs. lifebuy: ti has announced that the device will be discontinued, and a lifetime-buy period is in effect. nrnd: not recommended for new designs. device is in production to support existing customers, but ti does not recommend using this part in a new design. preview: device has been announced but is not in production. samples may or may not be available. obsolete: ti has discontinued the production of the device. (2) eco plan - the planned eco-friendly classification: pb-free (rohs), pb-free (rohs exempt), or green (rohs & no sb/br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. tbd: the pb-free/green conversion plan has not been defined. pb-free (rohs): ti's terms "lead-free" or "pb-free" mean semiconductor products that are compatible with the current rohs requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. where designed to be soldered at high temperatures, ti pb-free products are suitable for use in specified lead-free processes. pb-free (rohs exempt): this component has a rohs exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. the component is otherwise considered pb-free (rohs compatible) as defined above. green (rohs & no sb/br): ti defines "green" to mean pb-free (rohs compatible), and free of bromine (br) and antimony (sb) based flame retardants (br or sb do not exceed 0.1% by weight in homogeneous material) (3) msl, peak temp. -- the moisture sensitivity level rating according to the jedec industry standard classifications, and peak solder temperature. (4) there may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) multiple device markings will be inside parentheses. only one device marking contained in parentheses and separated by a "~" will appear on a device. if a line is indented then it is a continuation of the previous line and the two combined represent the entire device marking for that device. important information and disclaimer: the information provided on this page represents ti's knowledge and belief as of the date that it is provided. ti bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. efforts are underway to better integrate information from third parties. ti has taken and
package option addendum www.ti.com 16-oct-2013 addendum-page 2 continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. ti and ti suppliers consider certain information to be proprietary, and thus cas numbers and other limited information may not be available for release. in no event shall ti's liability arising out of such information exceed the total purchase price of the ti part(s) at issue in this document sold by ti to customer on an annual basis.
tape and reel information *all dimensions are nominal device package type package drawing pins spq reel diameter (mm) reel width w1 (mm) a0 (mm) b0 (mm) k0 (mm) p1 (mm) w (mm) pin1 quadrant CC1121RHBR vqfn rhb 32 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 cc1121rhbt vqfn rhb 32 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 cc1121rhmr vqfn rhm 32 0 330.0 12.4 5.3 5.3 1.5 8.0 12.0 q2 package materials information www.ti.com 16-oct-2013 pack materials-page 1
*all dimensions are nominal device package type package drawing pins spq length (mm) width (mm) height (mm) CC1121RHBR vqfn rhb 32 3000 338.1 338.1 20.6 cc1121rhbt vqfn rhb 32 250 210.0 185.0 35.0 cc1121rhmr vqfn rhm 32 0 338.1 338.1 20.6 package materials information www.ti.com 16-oct-2013 pack materials-page 2

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